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Tuesday, 31 December 2013

Graphene-Based Field-Effect Transistor With Semiconducting Nature Opens Up Practical Use in Electronics

UNIST announced a method for the mass production of boron/nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene-based field-effect transistor (FET) with semiconducting nature. This opens up opportunities for practical use in electronic devices. 

The Ulsan National Institute of Science and Technology (UNIST) research team led by Prof. Jong-Beom Baek have discovered an efficient method for the mass production of boron/nitrogen co-doped graphene nanoplatelets (BCN-graphene) via a simple solvothermal reaction of BBr3/CCl4/N2 in the presence of potassium. This work was published in “Angewandte Chemie International Edition” as a VIP (“Very Important Paper”).


A schematic representation for the formation of BCN-graphene via solvothermal reaction between carbon tetrachloride (CCl4) boron tribromide (BBr3) and nitrogen (N2) in the presence of potassium (K). Photograph is of the autoclave after the reaction, showing the formation of BCN-graphene (black) and potassium halide (KCl and KBr, white).
 
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